Miniature mesa extension for a planar submicron AlGaN/GaN HEMT gate formation

Alathbah, Moath and Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097 2022. Miniature mesa extension for a planar submicron AlGaN/GaN HEMT gate formation. Micromachines 13 (11) , 2007. 10.3390/mi13112007

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Abstract

In this letter, a novel approach is presented to overcome issues in AlGaN/GaN high elec- tron mobility transistors (HEMTs), such as metal discontinuity of the gate stemmed from conven- tional mesa isolation. This usually requires a careful mesa etch process to procure an anisotropic mesa-wall profile. An alternative technique is the use of ion implantation for device isolation instead of conventional mesa for a planar device formation. However, ion implantation is a costly process and not always easily accessible. In this work, the proposed method is to simply extend the mesa below the gate just enough to accommodate the gatefeed, thereby ensuring the entire gate is planar in structure up to the gatefeed. The newly developed device exhibited no compromise to the DC (direct current) and RF (radio frequency) performance. Conversely, it produced a planar gate con- figuration with an enhanced DC transconductance (approximately 20% increase is observed) and a lower gate leakage while the etch process is considerably simplified. Similarly, the RF transconduct- ance of proposed device (device B) increased by 80% leading to considerable improvements in RF performance.

Item Type:	Article
Date Type:	Published Online
Status:	Published
Schools:	Engineering
Publisher:	MDPI
ISSN:	2072-666X
Date of First Compliant Deposit:	20 November 2022
Date of Acceptance:	14 November 2022
Last Modified:	10 Feb 2024 02:08
URI:	https://orca.cardiff.ac.uk/id/eprint/154336

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