Turn-on switching analysis of sic/si hybrid switch

Wei, Jixuan, Li, Zekun, Tan, Kun, Li, Chen and Ji, Bing 2022. Turn-on switching analysis of sic/si hybrid switch. Lecture Notes in Electrical Engineering 899 , pp. 47-55. 10.1007/978-981-19-1922-0_5

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Abstract

SiC/Si hybrid switch (HyS) has been proven to be a cost-effective switch by later turn-off of SiC MOSFET, the tail current of IGBT can be eliminated and therefore, achieve a turn-off zero voltage switching. During turn-on transient, different turn-on delay time will impact the switching losses and device stress. Normally, zero turn-on delay time is used. In this case, the total switching losses of the HyS may not be minimal, In addition, in order to achieve cost-effectiveness, the current ratio of the HyS will keeps low (1:4 or 1:5), zero turn-on delay time may cause excessive stress on the SiC MOSFET. In this paper, an analytical model of HyS was proposed, the turn-on switching loss of HyS can be analysed by changing turn-on delay time. The analytical model was verified by LTspice. Simulation result shows that a small negative turn-on delay time with small IGBT gate resistor can achieve minimum switching loss while reduce the stress of SiC MOSFET.

Item Type:	Article
Date Type:	Published Online
Status:	Published
Schools:	Engineering
Publisher:	Springer Science Business Media
ISSN:	1876-1100
Last Modified:	30 Nov 2022 10:45
URI:	https://orca.cardiff.ac.uk/id/eprint/154521

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