Azad, Ehsan M., Quaglia, Roberto ![]() ![]() ![]() |
Official URL: http://dx.doi.org/10.23919/APMC55665.2022.9999796
Abstract
This paper presents analysis of Fourier transferred dataset to accurately extract a DC-dependent Cardiff nonlinear behavioral model. The analysis is based on simulation data of a 10 W GaN high electron mobility transistor (HEMT) at 3.5 GHz. Tailored load-pull data were collected over a modulated gate and drain voltages ranging from −3.0 V to −2.0 V and 15 V to 30 V, respectively. The extracted model coefficients are capable of accurately predicting the load-pull data with normalized-mean-square-error (NMSE) value of less than −40 dB.
Item Type: | Conference or Workshop Item (Paper) |
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Date Type: | Publication |
Status: | Published |
Schools: | Engineering |
Publisher: | IEEE |
Last Modified: | 06 May 2023 01:13 |
URI: | https://orca.cardiff.ac.uk/id/eprint/157511 |
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