Curved InGaAs nanowire array lasers grown directly on silicon-on-insulator

Ratiu, Bogdan, Temu, Balthazar, Messina, Cristian, Abouzaid, Oumaima, Rihani, Samir, Berry, Graham, Oh, Sang Soon ORCID: https://orcid.org/0000-0003-3093-7016 and Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704 2023. Curved InGaAs nanowire array lasers grown directly on silicon-on-insulator. Optics Express 31 (22) , pp. 36668-36676. 10.1364/OE.499696

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Abstract

Catalyst-free, selective nano-epitaxy of III-V nanowires provides an excellent materials platform for designing and fabricating ultra-compact, bottom-up photonic crystal lasers. In this work, we propose a new type of photonic crystal laser with a curved cavity formed by InGaAs nanowires grown directly on silicon-on-insulator. This paper investigates the effect of the radius of the curved cavity on the emission wavelength, quality factor as well as laser beam emission angle. We find that the introduction of curvature does not degrade the quality factor of the cavity, thereby offering another degree of freedom when designing low-footprint multiwavelength photonic crystal nanowire lasers. The experimentally demonstrated device shows a lasing threshold of 157 µJ/cm2 at room temperature at telecom O-band wavelengths.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	Optica
ISSN:	1094-4087
Funders:	EPSRC, European Regional Development Fund
Date of First Compliant Deposit:	21 September 2023
Date of Acceptance:	21 August 2023
Last Modified:	31 Oct 2023 10:09
URI:	https://orca.cardiff.ac.uk/id/eprint/162674

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