Gaddi, R., Pla, A. and Tasker, Paul J. ![]() |
Abstract
Compression and harmonic generation mechanisms coupled to the non-linear output drift-region capacitance of Silicon LDMOS FET transistors are thoroughly investigated. Largesignal timedomain analysis is performed on the device operated as a class AB amplifier. Observations confirm significant real power being shifted fiom the fundamental to the even order harmonics by the capacitive element acting effectively as a varactor diode multiplier.
Item Type: | Conference or Workshop Item (Paper) |
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Date Type: | Publication |
Status: | Published |
Schools: | Engineering |
Publisher: | IEEE |
ISBN: | 0780371186 |
Last Modified: | 18 Oct 2022 14:08 |
URI: | https://orca.cardiff.ac.uk/id/eprint/16601 |
Citation Data
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