Tin gallium oxide epilayers on different substrates: optical and compositional analysis

Hunter, Daniel. A., Gunasekar, Naresh‐Kumar, Edwards, Paul R., Makydonska, Olha, Massabuau, Fabien C. P., Hatipoglu, Isa, Mukhopadhyay, Partha, Schoenfeld, Winston V. and Martin, Robert W. 2024. Tin gallium oxide epilayers on different substrates: optical and compositional analysis. Physica Status Solidi (B) – basic solid state physics 261 (10) , 2400137. 10.1002/pssb.202400137

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Abstract

Electron beam techniques have been used to analyze the impact of substrate choice and growth parameters on the compositional and optical properties of tin gallium oxide [(Sn x Ga1−x)2O3] thin films grown by plasma‐assisted molecular beam epitaxy. Sn incorporation and film quality are found to be highly dependent on growth temperature and substrate material (silicon, sapphire, and bulk Ga2O3) with alloy concentrations varying up to an x value of 0.11. Room temperature cathodoluminescence spectra show the Sn alloying suppressing UV (3.3–3.0 eV), enhancing blue (2.8–2.4 eV), and generating green (2.4–2.0 eV) emission, indicative of the introduction of a high density of gallium vacancies (VGa) and subsequent VGa–Sn complexes. This behavior was further analyzed by mapping composition and luminescence across a cross section. Compared to Ga2O3, the spectral bands show a clear redshift due to bandgap reduction, confirmed by optical transmission measurements. The results show promise that the bandgap of gallium oxide can successfully be reduced through Sn alloying and used for bandgap engineering within UV optoelectronic devices.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Additional Information:	License information from Publisher: LICENSE 1: URL: http://creativecommons.org/licenses/by/4.0/
Publisher:	Wiley
ISSN:	0370-1972
Date of First Compliant Deposit:	3 July 2024
Date of Acceptance:	18 June 2024
Last Modified:	05 Nov 2024 13:47
URI:	https://orca.cardiff.ac.uk/id/eprint/170236

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