Mishra, P., Jarvis, L., Hodges, C.  ORCID: https://orcid.org/0000-0002-4993-4547, Enderson, A., Albeladi, F., Gillgrass, S. J., Forrest, R., Allford, C. P. ORCID: https://orcid.org/0000-0002-3798-9014, Deng, H., Tang, M., Liu, H., Shutts, S. ORCID: https://orcid.org/0000-0001-6751-7790 and Smowton, P. M. ORCID: https://orcid.org/0000-0002-9105-4842
2024.
Achieving O-band InAs quantum dot laser operation at 200 °C.
Presented at: 2024 IEEE 29th International Semiconductor Laser Conference (ISLC),
Orlando, FL, USA,
29 September - 02 October 2024.
2024 IEEE 29th International Semiconductor Laser Conference (ISLC).
IEEE,
pp. 1-2.
10.1109/islc57752.2024.10717409
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Official URL: https://doi.org/10.1109/islc57752.2024.10717409
Abstract
We demonstrate O-band InAs quantum dot laser operation up to 202 °C. A Fabry Perot laser device with as-cleaved facets and a co-doped scheme within the active region enables ultra-high temperature laser operation without requiring high-reflective facet coatings.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Date Type: | Published Online |
| Status: | Published |
| Schools: | Schools > Physics and Astronomy |
| Publisher: | IEEE |
| ISBN: | 979-8-3503-7299-1 |
| Date of First Compliant Deposit: | 27 January 2025 |
| Date of Acceptance: | 1 October 2024 |
| Last Modified: | 18 Feb 2025 10:00 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/173651 |
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