Ka-band single-pole double-throw switch in GaN MMIC technology

Ghozati, Seyed Urman ORCID: https://orcid.org/0000-0002-6014-5223 and Quaglia, Roberto ORCID: https://orcid.org/0000-0003-3228-301X 2025. Ka-band single-pole double-throw switch in GaN MMIC technology. International Journal of Microwave and Wireless Technologies 10.1017/S1759078725000108

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Abstract

This work describes the design process of a single-pole double-throw (SPDT) microwave switch operating at Ka-band. It is tailored to a tunable reflective termination design that can be used in tunable power amplifier configurations. A high electron mobility transistor and a resonating network are employed in shunt configuration to enhance the performance in the output port’s active and inactive conditions. The small and large signal measurements showcase a 2 GHz bandwidth with an insertion loss and isolation better than −1.8 dB and −25 dB, respectively, and handling power levels of up to 3 W at 30.5 GHz. The load-pull measurements across the entire Smith chart offer comprehensive insights into the behavior of the SPDT when operating with complex and reactive loads, fulfilling the purpose of tunable reactive termination.

Item Type:	Article
Date Type:	Published Online
Status:	Published
Schools:	Schools > Engineering
Publisher:	Cambridge University Press
ISSN:	1759-0787
Date of First Compliant Deposit:	21 February 2025
Date of Acceptance:	10 December 2024
Last Modified:	03 Mar 2025 11:03
URI:	https://orca.cardiff.ac.uk/id/eprint/176368

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