Yi, Xin, Jin, Xiao, Liang, Baolai L., Lewis, Harry, Tian, Qingyu, Tan, Chee Hing, Xie, Shiyu ![]() ![]() |
Abstract
There has been considerable interest over many years in finding a way by which we can amplify optical signals at the telecommunication wavelengths of 1300 and 1550nm using the impact ionization process, much as in the manner that silicon does at visible wavelengths but with low excess noise, high sensitivity and high speed. To date, AlxGa1-xAs0.56Sb0.44 is a promising avalanche material which can be grown lattice-matched to an InP substrate and therefore use InGaAs or GaAsSb as the absorption region. In this paper, we compare the excess noise in the AlxGa1-xAs0.56Sb0.44 alloy lattice matched to InP. In 2019, excess noise values of F=2.2 in AlAs0.56Sb0.44 based APDs were obtained at gains of M=40—significantly better than those achievable with InP or InAlAs. We very recently demonstrated sub-McIntyre characteristics with F remaining below the k=0 limit of 2 up to avalanche gains of M>60, and then increasing linearly to F=2.45 at M=90 from thick Al0.75Ga0.25As0.56Sb0.44 grown on InP substrates. We also demonstrated that the excess noise factor in the lower-aluminium Al0.55Ga0.45As0.56Sb0.44 alloy, with a bandgap of ~1.24eV, is higher than in the higher-aluminium composition alloys studied to date, but comparable to some commercial Silicon APDs and about half that of equivalent InAlAs.
Item Type: | Conference or Workshop Item (Paper) |
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Date Type: | Published Online |
Status: | Published |
Schools: | Schools > Physics and Astronomy |
Publisher: | SPIE |
Last Modified: | 28 Mar 2025 11:30 |
URI: | https://orca.cardiff.ac.uk/id/eprint/177100 |
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