Deep‐UV light‐emitting based on the hBN:S/hBN: Mg homojunction

Chen, Ransheng, Li, Qiang, Fang, Wannian, Zhang, Qifan, Li, Jiaxing, Zhang, Zhihao, Liu, Kangkang, Yun, Feng, Guo, Yanan, Wang, Tao and Hao, Yue 2025. Deep‐UV light‐emitting based on the hBN:S/hBN: Mg homojunction. Advanced Science 10.1002/advs.202414353

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Abstract

A hexagonal boron nitride (hBN) based p‐n homo‐junction is expected to demonstrate a great potential for being fabricated into an emitter (either light‐emitting diode or laser diode) in the deep‐UV spectral region. However, it remains a great challenge to achieve n‐type conductive hBN. Herein, n‐type hBN is obtained by means of doping sulfur into hBN. The structure and the electric properties of S‐doped hBN is studied via density functional theory, indicating that the orbital coupling between S 3p and B 2p orbital introduces shallow donor energy levels. The S atoms in the multilayer structure demonstrate enhanced electron delocalization compared with its mono‐layer counterpart, suggesting that multilayer hBN:S is more inclined to be n‐type conductive than its mono‐layer counterpart. Experimentally, a multilayer hBN:S sample is successfully grown on sapphire substrates, where the S content, up to 1.21%, is obtained. The hBN:S film shows an in‐plane current of 1.6 nA using Ti as ohmic contact and 8.4 nA using Ni as Schottky contact, respectively. The donor level induced by the S atoms is located at 0.349 eV below the CBM. Finally, a vertically‐stacked n‐hBN/p‐hBN (hBN:S/hBN: Mg) structured junction is grown, and demonstrating a promise for being fabricated into a deep‐UV emitter.

Item Type:	Article
Date Type:	Published Online
Status:	In Press
Schools:	Schools > Physics and Astronomy
Additional Information:	License information from Publisher: LICENSE 1: URL: http://creativecommons.org/licenses/by/4.0/, Start Date: 2025-03-16
Publisher:	Wiley
ISSN:	2198-3844
Date of First Compliant Deposit:	27 March 2025
Last Modified:	27 Mar 2025 17:00
URI:	https://orca.cardiff.ac.uk/id/eprint/177224

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