Tunable analog and nearly digital responses in hole-doped LiNbO2 memristors

Craco, L., Carara, S.S., de Arruda, A.S., de Arruda, P.H.Z. and Leoni, S. ORCID: https://orcid.org/0000-0003-4078-1000 2025. Tunable analog and nearly digital responses in hole-doped LiNbO2 memristors. Solid State Communications 401 , 115911. 10.1016/j.ssc.2025.115911 Item availability restricted.

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Abstract

We present a computational study based on density functional plus dynamical mean-field theory, unveiling the electronic structure reconstruction of delithiated LiNbO bulk crystal. Our results yield a consistent picture for the correlated electronic state of Li NbO and point at the importance of Mottness and Landau-Fermi liquidness to the current–voltage characteristic of digital-Mott and analog memristors circuitry for future neuromorphic computing.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Professional Services > Advanced Research Computing @ Cardiff (ARCCA) Schools > Chemistry
Publisher:	Elsevier
ISSN:	0038-1098
Date of First Compliant Deposit:	7 April 2025
Date of Acceptance:	6 March 2025
Last Modified:	16 Jun 2025 14:45
URI:	https://orca.cardiff.ac.uk/id/eprint/177448

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