Gate dependence of spin-splitting in an InSb/InAlSb quantum well

Branford, W. R., Gilbertson, A. M., Buckle, Philip Derek ORCID: https://orcid.org/0000-0001-9508-7783, Buckle, L., Ashley, T., Magnus, F., Clowes, S. K., Harris, J. J. and Cohen, L. F. 2008. Gate dependence of spin-splitting in an InSb/InAlSb quantum well. Presented at: 13th International Conference on Narrow Gap Semiconductors, Guildford, UK, 8–12 July 2007. Narrow gap semiconductors 2007: proceedings of the 13th International Conference on Narrow Gap Semiconductors, Guildford, UK, 8–12 July 2007. Springer Proceedings in Physics (119) Dordrecht: Springer, pp. 3-5. 10.1007/978-1-4020-8425-6_1

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Abstract

A high mobility single subband occupancy InSb/InAlSb quantum well was grown by molecular beam epitaxy. The low-temperature, high-field magnetotransport properties are measured as a function of gate bias. Spin-resolved Shubnikov-de Haas oscillations are observed. A preliminary analysis of the Shubnikov-de Haas oscillations indicates a strong gate bias dependence of the Rashba spin-orbit term.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Springer
ISBN:	9781402084249
ISSN:	0930-8989
Last Modified:	19 May 2023 01:38
URI:	https://orca.cardiff.ac.uk/id/eprint/18020

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