Implementation of a spurious solution free 8-band k.p model for the identification of absorption spectra of InAs quantum dots grown on GaAs

Jakobs, Ben, Gallagher, Dominic and Smowton, Peter M. ORCID: https://orcid.org/0000-0002-9105-4842 2025. Implementation of a spurious solution free 8-band k.p model for the identification of absorption spectra of InAs quantum dots grown on GaAs. Presented at: 2025 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), Munich, Germany, 23-27 June 2025. Proceedings of the 2025 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference. IEEE, 10.1109/cleo/europe-eqec65582.2025.11110451

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Abstract

Despite QD devices presenting a reduced threshold current density, improved device lifetime, and their insensitivity to defects, which enables monolithic growth on silicon [1], they have yet to have a commercial impact. A potential reason for this delay is the lack of a reliable model that can be used to simulate the functionality of QD based devices, prior to fabrication. Such models exist for structures based on e.g. QWs and have significantly facilitated the fabrication of state-of-the-art photonic devices. The final aim of this research is to implement a similar easy-to-use model for QD based photonic devices.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Published Online
Status:	Published
Schools:	Schools > Engineering
Publisher:	IEEE
ISBN:	9798331512538
ISSN:	2639-5452
Last Modified:	26 Aug 2025 14:00
URI:	https://orca.cardiff.ac.uk/id/eprint/180660

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