Temperature dependence of terahertz optical transitions from boron and phosphorus dopant impurities in silicon

Lynch, Stephen Anthony ORCID: https://orcid.org/0000-0001-9818-2284, Townsend, P., Matmon, G., Paul, D. J., Bain, M., Gamble, H. S., Zhang, J., Ikonic, Z., Kelsall, R. W. and Harrison, P. 2005. Temperature dependence of terahertz optical transitions from boron and phosphorus dopant impurities in silicon. Applied Physics Letters 87 (10) , 101114. 10.1063/1.2042544

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Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Additional Information:	3 pp. Pdf uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0003-6951/ (accessed 21/02/2014).
Publisher:	American Institute of Physics
ISSN:	0003-6951
Date of First Compliant Deposit:	30 March 2016
Last Modified:	15 May 2023 17:44
URI:	https://orca.cardiff.ac.uk/id/eprint/25322

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