SiGe quantum cascade structures for light emitting devices

Zhang, J., Li, X. B., Neave, J. H., Norris, D. J., Cullis, A. G., Kelsall, R. W., Lynch, Stephen Anthony ORCID: https://orcid.org/0000-0001-9818-2284, Towsend, P., Paul, D. J. and Fewster, P. F. 2005. SiGe quantum cascade structures for light emitting devices. Journal of Crystal Growth 278 (1-4) , pp. 488-494. 10.1016/j.jcrysgro.2004.12.046

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Abstract

The realisation of III–V quantum cascade lasers has initiated a strong interest in developing a Si/SiGe-based quantum cascade laser over the last 3 years. Most efforts were focused on the growth of strain-balanced Si/SiGe superlattices on strain-relaxed SiGe virtual substrates. This paper discusses the progress so far and addresses some of the material issues related to the epitaxy of Si/SiGe quantum cascade structures, including strain–stress balance and production of strain-relaxed SiGe virtual substrates.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	A1. Stresses; A1. X-ray diffraction; A3. Molecular beam epitaxy; B1. Germanium silicon alloys; B2. Semiconducting silicon compounds
Additional Information:	13th International Conference on Molecular Beam Epitaxy
Publisher:	Elsevier
ISSN:	0022-0248
Last Modified:	19 Oct 2022 10:43
URI:	https://orca.cardiff.ac.uk/id/eprint/25326

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