Electronic properties and applications of ultrananocrystalline diamond

Williams, Oliver Aneurin ORCID: https://orcid.org/0000-0002-7210-3004, Zimmermann, T., Kubovic, M., Denisenko, A., Kohn, E., Jackman, R. B. and Gruen, D. M. 2005. Electronic properties and applications of ultrananocrystalline diamond. Presented at: NATO Advanced Research Workshop on Synthesis, Properties and Applications of Ultrananocrystalline Diamond, St. Petersburg, Russia, 7-10 June 2004. Published in: Gruen, D. M., Shenderova, O. A. and Vul’, A. Ya. eds. Synthesis, Properties and Applications of Ultrananocrystalline Diamond. NATO Science Series (192/IV) Dordrecht: Springer, pp. 373-382. 10.1007/1-4020-3322-2_31

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Abstract

Ultrananocrystalline diamond (UNCD) is a 3–5 nm grain size material with many of the properties of diamond. Whilst intrinsic UNCD films display a mild p-type characteristic with high resistivity, the addition of nitrogen to the gas phase during deposition renders the material n-type with low resistivity and activation energy. Hall effect measurements as a function of temperature show that this conductivity mechanism is semi - metallic, with the carrier concentration decreasing very gradually with decreasing temperature. Increasing the nitrogen content in the gas phase during deposition results in higher carrier concentrations in the deposited films and lower activation energies. The carrier mobilities of the films are limited by the grain size of the films. A prototype heterostructure diode is demonstrated, combining single crystal and ultrananocrystalline diamond.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	Hall effect - n-type conductivity - diamond - nanocrystalline
Publisher:	Springer
ISBN:	9781402033209
Last Modified:	21 Oct 2022 08:42
URI:	https://orca.cardiff.ac.uk/id/eprint/34147

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