Dynamics of the inner ring in photoluminescence of GaAs/AlGaAs indirect excitons

Wilkes, Joe ORCID: https://orcid.org/0000-0001-6776-9162, Mouchliadis, Leonidas, Muljarov, Egor A. ORCID: https://orcid.org/0000-0002-2878-4148, Ivanov, A. L., Hammack, A. T., Butov, L. V. and Gossard, A. C. 2010. Dynamics of the inner ring in photoluminescence of GaAs/AlGaAs indirect excitons. Journal of Physics: Conference Series 210 (1) , 012050. 10.1088/1742-6596/210/1/012050

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Abstract

A theoretical description of the diffusion, thermalization and photoluminescence of indirect excitons in low temperature (≈ 1K) GaAs/AlGaAs coupled quantum wells is compared with experiments on their photoluminescence dynamics. The results shown in this contribution demonstrate a highly accurate agreement between the two. We concentrate on two key features seen in the photoluminescence pattern: the formation of an inner ring around a tightly focused laser excitation spot and a rapid increase in the intensity from the excitation spot immediately after laser termination – the PL-jump. These striking effects are explained in terms of the diffusion and relaxation thermodynamics of indirect excitons.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QB Astronomy
Publisher:	IOP Publishing
ISSN:	1742-6596
Last Modified:	21 Oct 2022 09:11
URI:	https://orca.cardiff.ac.uk/id/eprint/35556

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