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Dynamics of the inner ring in photoluminescence of GaAs/AlGaAs indirect excitons

Wilkes, Joe, Mouchliadis, Leonidas, Muljarov, Egor A., Ivanov, A. L., Hammack, A. T., Butov, L. V. and Gossard, A. C. 2010. Dynamics of the inner ring in photoluminescence of GaAs/AlGaAs indirect excitons. Journal of Physics: Conference Series 210 (1) , 012050. 10.1088/1742-6596/210/1/012050

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A theoretical description of the diffusion, thermalization and photoluminescence of indirect excitons in low temperature (≈ 1K) GaAs/AlGaAs coupled quantum wells is compared with experiments on their photoluminescence dynamics. The results shown in this contribution demonstrate a highly accurate agreement between the two. We concentrate on two key features seen in the photoluminescence pattern: the formation of an inner ring around a tightly focused laser excitation spot and a rapid increase in the intensity from the excitation spot immediately after laser termination – the PL-jump. These striking effects are explained in terms of the diffusion and relaxation thermodynamics of indirect excitons.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QB Astronomy
Publisher: IOP Publishing
ISSN: 1742-6596
Last Modified: 24 Oct 2017 08:17

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