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Lateral n–i–p junctions formed in an InSb quantum well by bevel etching

Nash, G. R., Nash, K. J., Smith, S. J., Bartlett, C. J., Jefferson, J. H., Buckle, L., Emeny, M. T., Buckle, Philip Derek and Ashley, T. 2005. Lateral n–i–p junctions formed in an InSb quantum well by bevel etching. Semiconductor Science and Technology 20 (2) , pp. 144-148. 10.1088/0268-1242/20/2/007

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We have used a novel, simple technique based on bevel etching, to fabricate samples containing lateral n–i–p junctions in an InSb/InAlSb quantum well. The structure was designed by self-consistent solution of Schrödinger's and Poisson's equations, and grown by molecular beam epitaxy on a SI GaAs substrate. Current/voltage characteristics were measured as a function of temperature between 10 and 80 K, and rectifying characteristics were obtained over the whole temperature range.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: IOP Publishing
ISSN: 0268-1242
Last Modified: 04 Jun 2017 04:20

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