Cross-barrier recombination in a GaAs/AlGaAs double-barrier resonant tunneling structure

Cockburn, J. W., Buckle, Philip Derek ORCID: https://orcid.org/0000-0001-9508-7783, Skolnick, M. S., Birkett, M. J., Teissier, R. and Smith, G. W. 1996. Cross-barrier recombination in a GaAs/AlGaAs double-barrier resonant tunneling structure. Journal of Applied Physics 79 (11) , pp. 8844-8846. 10.1063/1.362511

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Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	GALLIUM ARSENIDES, ALUMINIUM ARSENIDES, RECOMBINATION, TUNNEL EFFECT, RESONANCE, PHOTOLUMINESCENCE, QUANTUM WELLS, IV CHARACTERISTIC, HETEROSTRUCTURES
Additional Information:	Pdf uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0021-8979/ (accessed 21/02/2014).
Publisher:	American Institute of Physics
ISSN:	0021-8979
Date of First Compliant Deposit:	30 March 2016
Last Modified:	20 May 2023 20:47
URI:	https://orca.cardiff.ac.uk/id/eprint/37000

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