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An electrical and optical study of electrons in triple barrier structures

Kuo, C.-Y., Lynch, M. A., Roberts, A. H., Buckle, Philip Derek, Dawson, P., Missous, M. and Truscott, W. S. 1998. An electrical and optical study of electrons in triple barrier structures. Physica E: Low-dimensional Systems and Nanostructures 2 (1-4) , pp. 815-819. 10.1016/S1386-9477(98)00166-0

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Current–voltage curves measured over the temperature range 13–300 K show three shoulders and/or peaks common to most of a series of MBE-grown GaAs/AlxGa1−xAs triple-barrier resonant tunnelling structures. The widths of the barriers (x=∼0.33) were ∼49, ∼58 and ∼49 Å; one well width was fixed between 72 and 68 Å and the other varied between 68 and 45 Å. Photoluminescence (PL) and PL excitation spectroscopy and a self-consistent Poisson–Schrödinger model suggest that the features are associated with (i) the maximum in the transparency of the barrier region when the two electron levels in the wells are aligned, (ii) a cut-off in phonon emission assisted tunnelling between the wells when the separation of these levels exceeds the optical phonon energy of 36 meV, and (iii) cut-off of coupling between electrons in the negative contact and the states in the adjacent well.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Triple barriers; Resonant tunnelling; Photoluminescence; Self-consistent modelling
Publisher: Elsevier
ISSN: 1386-9477
Last Modified: 04 Jun 2017 04:20

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