Akmal, Muhammad, Lees, Jonathan ORCID: https://orcid.org/0000-0002-6217-7552, Carrubba, Vincenzo, Bensmida, S., Woodington, S., Benedikt, Johannes ORCID: https://orcid.org/0000-0002-9583-2349, Morris, K, Beach, M., McGeehan, J. and Tasker, Paul J. ORCID: https://orcid.org/0000-0002-6760-7830
2010.
Minimization of baseband electrical memory effects in GaN HEMTs using active IF load-pull.
Presented at: Asia-Pacific Microwave Conference (22nd : 2010),
Yokahama-shi, Japan,
7-10 December 2010.
2010 Asia-Pacific Microwave Conference proceedings : APMC 2010 : Dec. 7-10, Yokohama, Japan.
Tokyo, Japan:
Institute of Electronics, Information and Communication Engineers (IEICE),
pp. 5-8.
|
Abstract
This paper presents a rigorous way to quantify the role played by higher baseband impedances in determining baseband electrical memory effects observed in power transistors under two-carrier excitation. These effects typically appear not only as asymmetrical distortion terms in the frequency domain, but also more reliably as a recognizeable hysteresis or looping in the dynamic transfer characteristics extracted from measured input voltage and output current envelopes of a power device. Investigations have been carried out using a commercially available 10W GaN HEMT device characterised at 2GHz within a high-power modulated wavefor measurement system. Active IF loadpull has been employed to present specific baseband impedance environments, allowing the sensitivity of IMD symmetry to baseband impedance variations to be investigated.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Engineering |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Publisher: | Institute of Electronics, Information and Communication Engineers (IEICE) |
| ISBN: | 9781424475902 |
| Related URLs: | |
| Last Modified: | 21 Oct 2022 10:22 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/40009 |
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