Development of a RF waveform stress test procedure for GaN HFETs subjected to infinite VSWR sweeps

McGenn, William, Choi, Heungjae ORCID: https://orcid.org/0000-0003-1108-293X, Lees, Jonathan ORCID: https://orcid.org/0000-0002-6217-7552, Uren, Michael J., Benedikt, Johannes ORCID: https://orcid.org/0000-0002-9583-2349 and Tasker, Paul J. ORCID: https://orcid.org/0000-0002-6760-7830 2012. Development of a RF waveform stress test procedure for GaN HFETs subjected to infinite VSWR sweeps. Presented at: 2012 IEEE MTT-S International Microwave Symposium Digest, Montreal, Canada, 17-22 June 2012. Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International. IEEE, pp. 1-3. 10.1109/MWSYM.2012.6259725

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Abstract

An RF waveform stress test has been developed in order to assess device degradation caused by the infinite VSWR conditions that could result from the removal of a protection isolator. The proposed stress test involves both DC and RF characterization of a device, before and after an RF stressing mechanism is applied. The procedure was first applied with the device being stressed whilst driving into its optimum impedance and secondly with the device being stressed by one of the three potential failure regions that result from an infinite VSWR sweep.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Engineering
Subjects:	T Technology > TA Engineering (General). Civil engineering (General)
Uncontrolled Keywords:	Gallium Nitride, HEMTs, microwave amplifiers, reliability
Publisher:	IEEE
ISBN:	9781467310857
ISSN:	0149-645X
Last Modified:	24 Oct 2022 10:24
URI:	https://orca.cardiff.ac.uk/id/eprint/44194

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