Surface X-Ray scattering during crystal growth: Ge on Ge(111)

Vlieg, E., van der Gon, A., van der Veen, J., MacDonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692 and Norris, C. 1988. Surface X-Ray scattering during crystal growth: Ge on Ge(111). Physical Review Letters 61 (19) , pp. 2241-2244. 10.1103/PhysRevLett.61.2241

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Abstract

The growth of Ge on Ge(111) has been monitored by in situ x-ray reflectivity and diffraction. For suitably chosen geometries, the scattered x-ray intensity is extremely sensitive to atomic-scale surface morphology; dramatic intensity changes occur upon deposition of a fraction of a monolayer. For substrate temperatures up to 200°C oscillations are observed in the scattered intensity, indicating growth by two-dimensional nucleation. Reflectivity curves reveal the detailed surface atomic geometry. All observations can be quantitatively understood by use of kinematical diffraction theory.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	American Physical Society
ISSN:	0031-9007
Last Modified:	24 Oct 2022 10:51
URI:	https://orca.cardiff.ac.uk/id/eprint/46153

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