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The initial stages of growth of Ge on Si(001) studied by X-ray diffraction

Williams, A. A., MacDonald, John Emyr, van Silfhout, R. G., van der Veen, J. F., Johnson, A. D. and NorriS, C. 1989. The initial stages of growth of Ge on Si(001) studied by X-ray diffraction. Journal of Physics: Condensed Matter 1 (Supp B) , SB273-SB274. 10.1088/0953-8984/1/SB/073

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The structure of an ultra-thin epitaxial Ge layer during in situ deposition onto a Si(001) surface has been investigated. Peaks arising from the 2*1 reconstruction disappear at a coverage of approximately=ML. The layer is epitaxial with respect to the substrate up to a coverage of approximately=5 Ml, beyond which the strained layer relaxes gradually. At a coverage of 10 ML the lateral strain is reduced to 2.2% compared with 4.0% in the unrelaxed layer.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: IOP Publishing
ISSN: 0953-8984
Last Modified: 04 Jun 2017 05:03

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