X-ray intensity oscillations occurring during growth of Ge on Ge(111)-a comparison with RHEED

van Silfhoutl, R. G., Frenkeni, J. W. M., van der Veeni, J. F., Ferrer, S., Johnson, A., Derbyshire, H., Norris, C. and MacDonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692 1989. X-ray intensity oscillations occurring during growth of Ge on Ge(111)-a comparison with RHEED. Journal of Physics: Condensed Matter 1 (Supp B) , SB213-SB214. 10.1088/0953-8984/1/SB/047

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Abstract

The growth of Ge on Ge(111) has been studied in situ by X-ray diffraction and reflectivity. For well defined geometries the scattered X-ray intensity is extremely sensitive to atomic-scale surface morphology. For substrate temperatures up to 200 degrees C oscillations in the reflected and diffracted yields are observed, which are indicative for two-dimensional nucleation. Curves showing reflectivity versus perpendicular momentum transfer Qz yield the height distribution of the islands. The use of X-rays allows for a straightforward 'single-scattering' interpretation of the intensities, as opposed to the use of reflection high-energy electron diffraction where multiple-scattering effects have to be taken into account.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	IOP Publishing
ISSN:	0953-8984
Last Modified:	24 Oct 2022 11:21
URI:	https://orca.cardiff.ac.uk/id/eprint/47809

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