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Optical properties of excitons in CdS semiconductor-insulator quantum wires

Gavrilov, S. A., Gusev, V. V., Dneprovskii, V. S., Zhukov, E. A., Syrnikov, A. N., Yaminskii, I. V. and Muljarov, Egor A. 1999. Optical properties of excitons in CdS semiconductor-insulator quantum wires. Journal of Experimental and Theoretical Physics Letters 70 (3) , pp. 216-221. 10.1134/1.568155

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The characteristic features of the luminescence spectra of CdS semiconductor nanocrystals, crystallized in hollow channels in a dielectric template, are explained in terms of excitonic transitions in semiconductor-insulator quantum wires. The excitonic transition energies agree with the values calculated taking into account the effects of size quantization and the “dielectric enhancement of excitons” — the large increase in the electron-hole attraction as a result of the difference between the permittivities of the semiconductor and insulator. The theoretically computed binding energies of excitons in CdS quantum wires with a diameter of 10 nm reach 170 meV. It is shown that the excitonic transition energy is constant for a wide range of wire diameters.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QB Astronomy
Uncontrolled Keywords: 78.66.Hf, 78.55.Et,71.35.Cc
Publisher: Nauka
ISSN: 0021-3640
Last Modified: 04 Jun 2017 05:07

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