Control of fine-structure splitting and biexciton binding in In_{x}Ga_{1-x}As quantum dots by annealing

Langbein, Wolfgang Werner ORCID: https://orcid.org/0000-0001-9786-1023, Borri, Paola ORCID: https://orcid.org/0000-0002-7873-3314 and Woggon, U. 2004. Control of fine-structure splitting and biexciton binding in In_{x}Ga_{1-x}As quantum dots by annealing. Physical Review B: Condensed Matter and Materials Physics 69 (16) , 161301(R). 10.1103/PhysRevB.69.161301

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Abstract

The distribution of the fine-structure splitting ħδ1 and of the biexciton binding energy ħδB are measured in a series of annealed InAs quantum dots. We find a decrease of ħδ1 from 96μeV to 6μeV with increasing annealing temperature, indicating a symmetrizing of the in-plane confinement potential. The biexciton binding energy shows only a weak dependence on the confinement energy, which we attribute to a compensation between decreasing confinement and decreasing separation of electron and hole.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	American Physical Society
ISSN:	1098-0121
Last Modified:	10 Jul 2024 19:17
URI:	https://orca.cardiff.ac.uk/id/eprint/48838

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