Low threshold InP/AlGaInP on GaAs QD laser emitting at ~740 nm

Krysa, A. B., Liew, S. L., Lin, J. C., Roberts, J. S., Lutti, Julie, Lewis, G. M. and Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842 2007. Low threshold InP/AlGaInP on GaAs QD laser emitting at ~740 nm. Journal of Crystal Growth 298 , pp. 663-666. 10.1016/j.jcrysgro.2006.10.087

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Abstract

We present results for InP quantum dots (QDs) within a AlGaInP matrix grown by metalorganic vapor phase epitaxy (MOVPE) at an elevated temperatures of 690–730 °C. InP/AlGaInP QD lasers grown under these conditions operate at room temperature in a pulsed mode with a low threshold of 190 A/cm2 (38 A/cm2 per QD sheet) and lasing wavelength of 740 nm for a 2000 μm long device with uncoated facets.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Elsevier
ISSN:	0022-0248
Last Modified:	25 Oct 2022 09:39
URI:	https://orca.cardiff.ac.uk/id/eprint/59514

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