Optimisation of high power AlGaInP laser diodes for optical storage applications

Elliott, Stella, Berry, G. and Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842 2006. Optimisation of high power AlGaInP laser diodes for optical storage applications. IEE Proceedings Optoelectronics 153 (6) , pp. 321-325. 10.1049/ip-opt:20060050

Full text not available from this repository.

Abstract

The use of expanded mode layers in lasers designed for DVD read/write applications is investigated and their performance is compared with that of a more conventional structure. The expanded mode design achieves a higher confinement factor and hence much lower threshold currents than the conventional structure, for the same measured vertical farfield divergence of 18deg. T0 is increased from 51 to 65 K (20-70degC) for the expanded mode structure for 320-mum long devices with uncoated facets. It is also found that zinc or magnesium can be used interchangeably for the p-dopant in a given structure without any impact on device performance.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Institution of Engineering and Technology
ISSN:	1350-2433
Last Modified:	25 Oct 2022 09:39
URI:	https://orca.cardiff.ac.uk/id/eprint/59515

Citation Data

Cited 6 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item