740 nm InP/GaInP quantum-dot laser with 190 A cm/sup -2/ room temperature threshold current density

Lutti, Julie, Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842, Lewis, G. M., Krysa, A. B., Roberts, J. S., Houston, P. A., Xin, Y. C., Li, Y. and Lester, L. F. 2005. 740 nm InP/GaInP quantum-dot laser with 190 A cm/sup -2/ room temperature threshold current density. Electronics letters 41 (5) , pp. 247-248. 10.1049/el:20057201

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Abstract

InP quantum-dot lasers grown on GaAs substrates and emitting in the 730-740 nm band with threshold current density as low as 190 A cm/sup -2/ for a 2000 /spl mu/m-long device with uncoated facets are reported.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Institution of Engineering & Technology
ISSN:	0013-5194
Last Modified:	25 Oct 2022 09:40
URI:	https://orca.cardiff.ac.uk/id/eprint/59546

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