Ultranarrow polaritons in a semiconductor microcavity

Jensen, J. R., Borri, Paola ORCID: https://orcid.org/0000-0002-7873-3314, Langbein, Wolfgang Werner ORCID: https://orcid.org/0000-0001-9786-1023 and Hvam, J. M. 2000. Ultranarrow polaritons in a semiconductor microcavity. Applied Physics Letters 76 (22) , pp. 3262-3264. 10.1063/1.126601

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Abstract

We have achieved a record high ratio (19) of the Rabi splitting (3.6 meV) to the polaritonlinewidth (190 μeV), in a semiconductor λ microcavity with a single 25 nm GaAsquantum well at the antinode. The narrow polariton lines are obtained with a special cavity design which reduces the exciton broadening due to scattering with free charges and has a very low spatial gradient of the cavity resonance energy. Since the static quantum-well disorder is very small, the polariton broadening is dominantly homogeneous. Still, the measured linewidths close to zero detuning cannot be correctly predicted using the linewidth averaging model.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Biosciences Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	American Institute of Physics
ISSN:	0003-6951
Last Modified:	25 Oct 2022 09:44
URI:	https://orca.cardiff.ac.uk/id/eprint/59817

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