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Room-temperature dephasing in InAs quantum dots

Borri, Paola, Langbein, Wolfgang Werner, Mork, J., Hvam, J. M., Heinrichsdorff, F., Mao, M.-H. and Bimberg, D. 2000. Room-temperature dephasing in InAs quantum dots. Physica Status Solidi (a) 178 (1) , pp. 337-340. 10.1002/1521-396X(200003)178:1<337::AID-PSSA337>3.0.CO;2-M

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The room temperature dephasing in InAs/InGaAs/GaAs self-assembled quantum dots, embedded in a waveguide for laser applications, is measured using two independent methods: spectral hole burning and four-wave mixing. Without the application of bias current for electrical carrier injection, a dephasing time of approximate to 260 fs, weakly dependent on the optical excitation density, is found and attributed to phonon interaction. The application of a bias current, leading to population inversion in the dot ground state and optical gain, strongly decreases the dephasing time to less than 50 fs, likely due to enhanced carrier-carrier scattering in the presence of the electrically injected carriers.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Biosciences
Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Wiley
ISSN: 0031-8965
Last Modified: 15 Apr 2020 13:09

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