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Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers

Borri, Paola, Langbein, Wolfgang Werner, Hvam, J. M., Heinrichsdorff, F., Mao, M.-H. and Bimberg, D. 2000. Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers. IEEE Journal of Selected Topics in Quantum Electronics 6 (3) , pp. 544-551. 10.1109/2944.865110

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The ultrafast gain and index dynamics in a set of InAs-InGaAs-GaAs quantum-dot (QD) amplifiers are measured at room temperature with femtosecond resolution. The role of spectral hole-burning (SHB) and carrier heating (CH) in the recovery of gain compression is investigated in detail. An ultrafast recovery of the spectral hole within /spl sim/100 fs is measured, comparable to bulk and quantum-well amplifiers, which is contradicting a carrier relaxation bottleneck in electrically pumped QD devices. The CH dynamics in the QD is quantitatively compared with results on an InGaAsP bulk amplifier. Reduced CH for both gain and refractive index dynamics of the QD devices is found, which is a promising prerequisite for high-speed applications. This reduction is attributed to reduced free-carrier absorption-induced heating caused by the small carrier density necessary to provide amplification in these low-dimensional systems.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Biosciences
Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Quantum-dot lasers; ultrafast optics
Publisher: IEEE
ISSN: 1077-260X
Last Modified: 15 Apr 2020 13:09

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