Morozov, Dmitry L., Mauskopf, Philip Daniel ![]() |
Abstract
We describe the performance of a direct detector that uses the high mobility 2D electron gas (2DEG) formed at the AlGaAs/GaAs interface as a frequency selective absorber. The 2DEG mesa-structure is etched to form a planar periodic structure with resonant absorption properties in the submm - THz region. Electrons in the 2DEG are heated by incoming radiation above the lattice temperature and the temperature of the hot electrons is measured by Superconducting - 2DEG - Superconducting (S-2DEG-S) tunnel junctions. The estimated noise equivalent power for such a detector at 100 mK is in order of 10-18 W/Hz1/2. In this paper we present the spectral measurements and simulated results of absorption properties at 4.2 K for a resonant mesa geometry. The thermal conductance and time constant of 2D electrons are studied at 450 mK-4.2 K. We measure an electron-phonon conductance on the order of 10-17 W/K per electron at 450 mK which gives a low value of heat conductance 2DEG relative to normal metal absorbers due to the low 2DEG electron density. These devices have a combination of sensitivity and speed which makes them possible candidates for the components in future astrophysical THz instruments.
Item Type: | Conference or Workshop Item (Poster) |
---|---|
Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Subjects: | Q Science > QC Physics |
Publisher: | Curran Associates Inc |
ISBN: | 9781615673438 |
Last Modified: | 27 Oct 2022 09:14 |
URI: | https://orca.cardiff.ac.uk/id/eprint/64904 |
Citation Data
Cited 1 time in Scopus. View in Scopus. Powered By Scopus® Data
Actions (repository staff only)
![]() |
Edit Item |