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THz direct detector with 2D electron gas periodic structure absorber

Morozov, Dmitry L., Mauskopf, Philip Daniel, Bacchus, Ian Dean, Elliott, Martin, Dunscombe, Christopher, Hopkinson, M. and Henini, M. 2007. THz direct detector with 2D electron gas periodic structure absorber. Presented at: 18th International Symposium on Space Terahertz Technology 2007 (ISSTT 2007), Pasadena, CA, USA, 21-23 March 2007. Published in: Karpov, Alexandre ed. 8th International Symposium on Space Terahertz Technology 2007. Pittsburgh, Pa: Curran Associates Inc,

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We describe the performance of a direct detector that uses the high mobility 2D electron gas (2DEG) formed at the AlGaAs/GaAs interface as a frequency selective absorber. The 2DEG mesa-structure is etched to form a planar periodic structure with resonant absorption properties in the submm - THz region. Electrons in the 2DEG are heated by incoming radiation above the lattice temperature and the temperature of the hot electrons is measured by Superconducting - 2DEG - Superconducting (S-2DEG-S) tunnel junctions. The estimated noise equivalent power for such a detector at 100 mK is in order of 10-18 W/Hz1/2. In this paper we present the spectral measurements and simulated results of absorption properties at 4.2 K for a resonant mesa geometry. The thermal conductance and time constant of 2D electrons are studied at 450 mK-4.2 K. We measure an electron-phonon conductance on the order of 10-17 W/K per electron at 450 mK which gives a low value of heat conductance 2DEG relative to normal metal absorbers due to the low 2DEG electron density. These devices have a combination of sensitivity and speed which makes them possible candidates for the components in future astrophysical THz instruments.

Item Type: Conference or Workshop Item (Poster)
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Curran Associates Inc
ISBN: 9781615673438
Last Modified: 23 Jan 2020 04:04

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