Ogboi, Friday Lawrence, Tasker, Paul J. ![]() ![]() ![]() |
Abstract
Baseband injection is a technique that can provide a cost-effective linearizing solution that can be combined with supply modulation techniques such as envelope tracking (ET), to minimize AM/AM distortion and potentially simplify the DSP linearization requirement and associated cost. Recently [8], a new approach for computing the baseband injection stimulus, formulated in the envelope domain, was introduced. The concept was originally demonstrated using a 10W Cree GaN-on-SiC HFET device. In this work its robustness with respect to alternative device technology is investigated using 25W Nitronex NPTB00025 GaN-on-SiC HEMT depletion-mode and a 10W, high-voltage LD-MOS, enhancement-mode devices. Its effectiveness in dealing with AM/AM distortion is confirmed.
Item Type: | Conference or Workshop Item (Paper) |
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Date Type: | Publication |
Status: | Published |
Schools: | Engineering |
Subjects: | T Technology > TA Engineering (General). Civil engineering (General) |
Publisher: | IEEE |
Last Modified: | 27 Oct 2022 10:04 |
URI: | https://orca.cardiff.ac.uk/id/eprint/68808 |
Citation Data
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