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Advanced RF IV waveform engineering tool for use in device technology optimization: RF pulsed fully active harmonic load pull with synchronized 3eV laser

Casbon, Michael A. ORCID: https://orcid.org/0000-0002-8637-9888, Tasker, Paul J. ORCID: https://orcid.org/0000-0002-6760-7830, Wang, Wei-Chou, Lin, Che-Kai, Wang, Wen-Kai and Wohlmuth, W. 2013. Advanced RF IV waveform engineering tool for use in device technology optimization: RF pulsed fully active harmonic load pull with synchronized 3eV laser. Presented at: IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), Monterey, CA, USA, 13-16 October 2013. Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE. IEEE, pp. 1-4. 10.1109/CSICS.2013.6659212

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Abstract

The RF performance obtainable from a device often falls short of the expectations raised by analysis of the DCIV curves. This difference is typically associated with thermal or trapping effects. Hence, RF performance is traditionally assessed using load pull techniques, which can identify the optimum operating conditions, but cannot explain the shortfall. It has previously been shown that RF IV Waveform Engineering methods can give more insight to why there are differences without necessarily identifying their cause [1]. Here we show how adding RF pulse capability can help identify thermal contributions, and a synchronized 3eV Laser excitation can help identify and clear trapping contributions. Together these methods provide a powerful diagnostic tool for device technology optimization.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Engineering
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Publisher: IEEE
Last Modified: 27 Oct 2022 10:04
URI: https://orca.cardiff.ac.uk/id/eprint/68819

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