Song, Kyungju, Jeong, Yongchae and Choi, Heungjae ORCID: https://orcid.org/0000-0003-1108-293X
2008.
Varactor tunned high-Q aictive inductor with broadband tuning range.
Presented at: International SoC Design Conference,
Busan, South Korea,
24-25 November 2008.
2008 International Soc Design Conference (Isocc).
Picastaway, NJ:
IEEE,
III-42.
10.1109/SOCDC.2008.4815740
|
Abstract
This paper presents a novel high-Q inductor using conventional grounded active inductor and feedback parallel resonance circuit. The proposed high-Q inductor using tunable LC resonance circuit (HITR) consists of the conventional active grounded inductor and feedback parallel resonance circuit which is composed of low-Q spiral inductor and MOS varactor. The novelty of the proposed structure is based on the increase of Q-factor by feeding parallel resonance circuit into gyrator structure. The high-Q inductor is fabricated by 0.18 mum Hynix CMOS technology. The fabricated inductor shows inductance of above 45 nH and Q-factor of over 640 around 5.4 GHz.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Engineering |
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) |
| Publisher: | IEEE |
| ISBN: | 9781424425983 |
| Last Modified: | 27 Oct 2022 10:08 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/69007 |
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