Song, Kyungju, Jeong, Yongchae and Choi, Heungjae ORCID: https://orcid.org/0000-0003-1108-293X 2008. Varactor tunned high-Q aictive inductor with broadband tuning range. Presented at: International SoC Design Conference, Busan, South Korea, 24-25 November 2008. 2008 International Soc Design Conference (Isocc). Picastaway, NJ: IEEE, III-42. 10.1109/SOCDC.2008.4815740 |
Abstract
This paper presents a novel high-Q inductor using conventional grounded active inductor and feedback parallel resonance circuit. The proposed high-Q inductor using tunable LC resonance circuit (HITR) consists of the conventional active grounded inductor and feedback parallel resonance circuit which is composed of low-Q spiral inductor and MOS varactor. The novelty of the proposed structure is based on the increase of Q-factor by feeding parallel resonance circuit into gyrator structure. The high-Q inductor is fabricated by 0.18 mum Hynix CMOS technology. The fabricated inductor shows inductance of above 45 nH and Q-factor of over 640 around 5.4 GHz.
Item Type: | Conference or Workshop Item (Paper) |
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Date Type: | Publication |
Status: | Published |
Schools: | Engineering |
Subjects: | T Technology > TA Engineering (General). Civil engineering (General) |
Publisher: | IEEE |
ISBN: | 9781424425983 |
Last Modified: | 27 Oct 2022 10:08 |
URI: | https://orca.cardiff.ac.uk/id/eprint/69007 |
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