Modification of InN properties by interactions with hydrogen and nitrogen

Losurdo, Maria, Giangregorio, Maria Michela, Bruno, Giovanni, Kim, Tong-Ho, Wu, Pae, Choi, Soojeong, Morse, Mike, Brown, April, Masia, Francesco ORCID: https://orcid.org/0000-0003-4958-410X, Polimeni, Antonio and Capizzi, Mario 2005. Modification of InN properties by interactions with hydrogen and nitrogen. MRS Proceedings 892 , 803. 10.1557/PROC-0892-FF08-03

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Abstract

The interaction of InN epitaxial films grown by r.f. plasma assisted molecular beam epitaxy with atomic hydrogen and nitrogen, produced by remote r.f. H2 and N2 plasmas, is investigated. InN strongly reacts with both atomic hydrogen and nitrogen yielding depletion of nitrogen and concurrent formation of In clusters. The impact of hydrogen treatments on the optical properties of InN is assessed using photoluminescence (PL). It is found that hydrogen suppresses the intense PL band peaked at approximately 0.7eV for the as-grown InN epitaxial layers, and results in the appearance of a new PL band whose peak energy and intensity increase with H-dose. The effect of exposure to atomic hydrogen and nitrogen on electrical properties of InN is investigated using Hall effect measurements. Atomic force microscopy is also used for studying the morphological changes of InN upon interaction with atomic hydrogen and nitrogen.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	nitride; molecular beam epitaxy (MBE); optical properties.
Additional Information:	Issue title: Symposium FF - GaN, AIN, InN and Related Materials.
Publisher:	Cambridge University Press
ISSN:	1946-4274
Last Modified:	27 Oct 2022 10:15
URI:	https://orca.cardiff.ac.uk/id/eprint/69465

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