Early manifestation of localization effects in diluted Ga(AsN)

Masia, Francesco ORCID: https://orcid.org/0000-0003-4958-410X, Polimeni, A., von Hogersthal, G. Baldassarri Hoger, Bissiri, M., Capizzi, M., Klar, P. J. and Stolz, W. 2003. Early manifestation of localization effects in diluted Ga(AsN). Applied Physics Letters 82 (25) , pp. 4474-4476. 10.1063/1.1586787

Full text not available from this repository.

Abstract

The electron effective mass, me, and extent of exciton wave function, rexc, were derived in GaAs1-yNy (y=0.043%–0.5%) from magnetophotoluminescence measurements. With an increase in nitrogen concentration, we find that me and rexc undergo a rapid increase and squeezing, respectively, even for y≈0.1%. This quite early manifestation of nitrogen-induced localization effects imposes important constraints on existing theoretical models. © 2003 American Institute of Physics.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	American Institute of Physics
ISSN:	0003-6951
Last Modified:	27 Oct 2022 10:15
URI:	https://orca.cardiff.ac.uk/id/eprint/69471

Citation Data

Cited 68 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item