InAlGaAs/AlGaAs quantum wells: line widths, transition energies and segregation

Jensen, J. R, Hvam, J. M and Langbein, Wolfgang Werner ORCID: https://orcid.org/0000-0001-9786-1023 2000. InAlGaAs/AlGaAs quantum wells: line widths, transition energies and segregation. Microelectronic Engineering 51-52 , pp. 257-264. 10.1016/S0167-9317(99)00489-X

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Abstract

We investigate the optical properties of InAlGaAs/AlGaAs quantum wells pseudomorphically grown on GaAs using molecular beam epitaxy (MBE). The transition energies, measured with photoluminescence (PL), are modelled solving the Schrödinger equation, and taking into account segregation in the group III sublattice. From a fit to the transition energies, an empirical band gap relation for InAlGaAs is found, in the composition range relevant for growth on GaAs. The PL lines at low temperature (T=10 K) are broadened due to random alloy fluctuations and an interface roughness of 1.1 monolayers. Finally, the use of InAlGaAs/AlGaAs quantum wells for making strained T-shaped quantum wires is demonstrated.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Elsevier
ISSN:	0167-9317
Last Modified:	28 Oct 2022 08:38
URI:	https://orca.cardiff.ac.uk/id/eprint/71568

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