Origin of the temperature dependence of threshold current in InP/AlGaInP quantum dot lasers

Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842, Elliott, Stella N., Shutts, Samuel ORCID: https://orcid.org/0000-0001-6751-7790, Michell, G., Al-Ghamdi, S. M. and Krysa, A. B, 2011. Origin of the temperature dependence of threshold current in InP/AlGaInP quantum dot lasers. Presented at: 2011 Conference on Lasers and Electro-Optics (CLEO), Baltimore Convention Center, Baltimore, MD, USA, 1-6 May 2011. CLEO: Science and Innovations 2011. CFL1. 10.1364/CLEO_SI.2011.CFL1

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Abstract

We quantitatively separate the factors that determine the threshold current temperature dependence at high tempertures in state-of-the-art InP quantum dot lasers and demonstrate a design with low threshold and reduced temperature sensitivity

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Subjects:	Q Science > QC Physics
ISBN:	9781557529107
Last Modified:	28 Oct 2022 09:06
URI:	https://orca.cardiff.ac.uk/id/eprint/73327

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