Analysis of DC-RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering

Roff, C., Benedikt, Johannes ORCID: https://orcid.org/0000-0002-9583-2349, Tasker, Paul ORCID: https://orcid.org/0000-0002-6760-7830, Wallis, D. J., Hilton, K. P., Maclean, J. O., Hayes, D. G., Uren, Michael John and Martin, T. 2009. Analysis of DC-RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering. IEEE Transactions of Electron Devices 56 (1) , pp. 13-19. 10.1109/TED.2008.2008674

Full text not available from this repository.

Abstract

This paper describes how dc-radio-frequency (RF) dispersion manifests itself in AlGaN/GaN heterojunction field-effect transistors when the devices are driven into different RF load impedances. The localized nature of the dispersion in the I-V plane, which is confined to the ldquokneerdquo region, is observed in both RF waveform and pulsed I-V measurements. The effect is fully reproduced using 2-D physical modeling. The difference in dispersive behaviors has been attributed to the geometry of a trap-induced virtual-gate region and the resulting carrier velocity saturation being overcome by punchthrough effects under high electric fields.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Engineering
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Uncontrolled Keywords:	Current collapse; microwave field-effect transistors (FETs); microwave measurements; semiconductor device modeling
Publisher:	IEEE
ISSN:	0018-9383
Last Modified:	17 Oct 2022 10:27
URI:	https://orca.cardiff.ac.uk/id/eprint/8082

Citation Data

Cited 71 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item