Roff, C., Benedikt, Johannes ![]() ![]() |
Abstract
This paper describes how dc-radio-frequency (RF) dispersion manifests itself in AlGaN/GaN heterojunction field-effect transistors when the devices are driven into different RF load impedances. The localized nature of the dispersion in the I-V plane, which is confined to the ldquokneerdquo region, is observed in both RF waveform and pulsed I-V measurements. The effect is fully reproduced using 2-D physical modeling. The difference in dispersive behaviors has been attributed to the geometry of a trap-induced virtual-gate region and the resulting carrier velocity saturation being overcome by punchthrough effects under high electric fields.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Engineering |
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
Uncontrolled Keywords: | Current collapse; microwave field-effect transistors (FETs); microwave measurements; semiconductor device modeling |
Publisher: | IEEE |
ISSN: | 0018-9383 |
Last Modified: | 17 Oct 2022 10:27 |
URI: | https://orca.cardiff.ac.uk/id/eprint/8082 |
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