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InAsP quantum dot lasers grown by MOVPE

Karomi, Ivan, Smowton, Peter Michael, Shutts, Samuel, Krysa, Andrey B. and Beanland, Richard 2015. InAsP quantum dot lasers grown by MOVPE. Optics Express 23 (21) , pp. 27282-27291. 10.1364/OE.23.027282

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We report on InAsP quantum dot lasers grown by MOVPE for 730-780 nm wavelength emission and compare performance with InP dot samples grown under similar conditions and with similar structures. 1-4 mm long, uncoated facet InAsP dot lasers emit between 760 and 775 nm and 2 mm long lasers with uncoated facets have threshold current density of 260 Acm−2, compared with 150 Acm−2 for InP quantum dot samples, which emit at shorter wavelengths, 715-725 nm. Pulsed lasing is demonstrated for InAsP dots up to 380 K with up to 200 mW output power. Measured absorption spectra indicate the addition of Arsenic to the dots has shifted the available transitions to longer wavelengths but also results in a much larger degree of spectral broadening. These spectra and transmission electron microscopy images indicate that the InAsP dots have a much larger degree of inhomogeneous broadening due to dot size variation, both from layer to layer and within a layer.

Item Type: Article
Date Type: Published Online
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Optical Society of America
ISSN: 1094-4087
Funders: EPSRC
Date of First Compliant Deposit: 30 March 2016
Date of Acceptance: 17 September 2015
Last Modified: 11 Dec 2020 03:09

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