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Optical response of strained- and unstrained-silicon cold-electron bolometers

Brien, Thomas, Ade, Peter, Barry, Peter, Dunscombe, Christopher, Leadley, D. R., Morozov, Dmitry, Myrononv, M., Parker, E. H. C, Prest, Martin, Prunnila, M., Sudiwala, Rashmikant, Whall, T. E. and Mauskopf, Philip 2016. Optical response of strained- and unstrained-silicon cold-electron bolometers. Journal of Low Temperature Physics 184 , pp. 231-237. 10.1007/s10909-016-1569-x

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We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small (32 × 14 µm) island of degenerately doped silicon with Superconducting aluminium contacts. Radiation is coupled into the silicon absorber with a twin-slot antenna designed to couple to 160-GHz radiation through a silicon lens.The first device has ahighly doped silicon absorber, the second has ahighly doped strained-silicon absorber. Using a novel method of cross-correlating the outputs from two parallel amplifiers, we measure noise-equivalent powers of 3.0×10−16 and 6.6×10^−17 W/rtHz for the control and strained device, respectively,when observing radiation from a 77-K source. In the case of the strained device, the noise-equivalent power is limited by the photon noise.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QB Astronomy
Q Science > QC Physics
Publisher: Springer
ISSN: 0022-2291
Funders: EPSRC, STFC, Academy of Finland
Date of First Compliant Deposit: 30 March 2016
Date of Acceptance: 24 February 2016
Last Modified: 11 Feb 2021 02:49

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