Development of single-stage and doherty GaN-based hybrid RF power amplifiers for quasi-constant envelope and high peak to average power ratio wireless standards

Moreno Rubio, Jorge ORCID: https://orcid.org/0000-0003-3376-4464, Fang, Jie, Quaglia, Roberto ORCID: https://orcid.org/0000-0003-3228-301X, Camarchia, Vittorio, Pirola, Marco and Ghione, Giovanni 2012. Development of single-stage and doherty GaN-based hybrid RF power amplifiers for quasi-constant envelope and high peak to average power ratio wireless standards. Microwave and Optical Technology Letters 54 (1) , pp. 206-210. 10.1002/mop.26459

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Abstract

This article describes the design, realization, and characterization of a set of hybrid medium-power RF power amplifiers, based on a commercial packaged GaN HEMT and developed through a low-cost microstrip process. Two different design solutions suitable for wireless applications are presented: the first, intended for a constant envelope modulation (with reference to the GSM standard) is a Class F amplifier exhibiting at 900 MHz an efficiency of 72% with an output power of 37.5 dBm; the second, optimized for nonconstant envelope signals with high dynamics (with reference to the UMTS WCDMA standard) is a Doherty amplifier showing, at 2.14 GHz, an efficiency higher than 40% at 6 dB of output power back-off with a maximum output power of 40 dBm

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Engineering
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Uncontrolled Keywords:	GaN; power amplifier; microstrip; wireless communications; Doherty
Publisher:	John Wiley & Sons
ISSN:	0895-2477
Last Modified:	01 Nov 2022 09:29
URI:	https://orca.cardiff.ac.uk/id/eprint/88095

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