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Electrically pumped continuous-wave III–V quantum dot lasers on silicon

Chen, Siming, Li, Wei, Wu, Jiang, Jiang, Qi, Tang, Mingchu, Shutts, Samuel, Elliott, Stella N., Sobiesierski, Angela, Seeds, Alwyn J., Ross, Ian, Smowton, Peter M. and Liu, Huiyun 2016. Electrically pumped continuous-wave III–V quantum dot lasers on silicon. Nature Photonics 10 , pp. 307-311. 10.1038/nphoton.2016.21

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Reliable, efficient electrically pumped silicon-based lasers would enable full integration of photonic and electronic circuits, but have previously only been realized by wafer bonding. Here, we demonstrate continuous-wave InAs/GaAs quantum dot lasers directly grown on silicon substrates with a low threshold current density of 62.5 A cm–2, a room-temperature output power exceeding 105 mW and operation up to 120 °C. Over 3,100 h of continuous-wave operating data have been collected, giving an extrapolated mean time to failure of over 100,158 h. The realization of high-performance quantum dot lasers on silicon is due to the achievement of a low density of threading dislocations on the order of 105 cm−2 in the III–V epilayers by combining a nucleation layer and dislocation filter layers with in situ thermal annealing. These results are a major advance towards reliable and cost-effective silicon-based photonic–electronic integration.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QB Astronomy
Q Science > QC Physics
Publisher: Nature Publishing Group
ISSN: 1749-4885
Funders: EPSRC
Date of Acceptance: 25 January 2016
Last Modified: 04 Nov 2020 15:02

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