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Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz

Brien, Thomas, Ade, Peter A. R., Barry, Peter, Dunscombe, Christopher, Leadley, D. R., Morozov, Dmitry, Myronov, M., Parker, E. H. C, Prest, Martin, Prunnila, M., Sudiwala, Rashmikant, Whall, T. E. and Mauskopf, Philip Daniel 2015. Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz. Presented at: 2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop (UCMMT), Cardiff, UK, 14-15 Sept. 2015. pp. 1-4. 10.1109/UCMMT.2015.7460630

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We present a study of a cold-electron bolometer operating at 350 mK with a twin-slot antenna coupling radiation at 160 GHz. The detector’s absorbing element consists of degenerately-doped strained silicon and has Schottky contacts to superconducting aluminium leads. These contacts allow for direct electron cooling of the absorber to below the phonon temperature, enabling the cold-electron bolometer to achieve much faster time constants (τ < 1 μs) compared to conventional bolometric detectors while not sacrificing sensitivity. We measure both the dark and optically-loaded noise of the detector via a novel method of cross-correlating the outputs of two amplifiers in order to measure noise below the amplifier noise level. From this we measure the photon-noise limited noise-equivalent power of the detector to be 6.6×10^−17 W/rtHz when observing a 77-Kelvin source.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QB Astronomy
Q Science > QC Physics
Funders: STFC, EPSRC, Academy of Finland
Date of Acceptance: 14 September 2015
Last Modified: 11 Feb 2021 02:49

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