Characterization of a high power GaN device for class E PA design with non-sinusoidal stimulus

Camarchia, Vittorio, Cipriani, Elisa, Colantonio, Paolo, Pirola, Marco, Quaglia, Roberto ORCID: https://orcid.org/0000-0003-3228-301X, Cabria, Lorena and Ayllon, Natanael 2016. Characterization of a high power GaN device for class E PA design with non-sinusoidal stimulus. Presented at: 2016 11th European Microwave Integrated Circuits Conference (EuMIC), London, UK, 3-4 October 2016. Microwave Integrated Circuits Conference (EuMIC), 2016 11th European. IEEE, p. 53. 10.1109/EuMIC.2016.7777487

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Abstract

This paper presents the campaign for the characterization of a GaN packaged power transistor, with the aim to test the foundry model accuracy in a non-conventional mode of operation. In particular, the device is adopted for the design of a 30 W, 435 MHz class E power amplifier to be inserted in a radio-frequency pulse-width-modulator for space application. Due to the biasing class of operation (class C), the conditions normally used for modelling are very different to the current design in terms of driving waveform (non-sinusoidal) and high order harmonics' terminations (in open circuit). In this framework, this campaign allowed for verification of the model accuracy, hence increasing the probability of success of the final design. The adopted measurement set-up and the characterization results are discussed in details.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Engineering
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Publisher:	IEEE
ISBN:	978-2-87487-044-6
Last Modified:	02 Nov 2022 10:20
URI:	https://orca.cardiff.ac.uk/id/eprint/98296

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